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| BBY 57-02W Silicon Tuning Diode Preliminary data * Excellent linearity * High Q hyperabrupt tuning diode * Low series inductance * High capacitance ratio * Designed for low tuning voltage operation for VCO's in mobile communications equipment * For control elements such as TCXOs and VCXOs 2 1 VES05991 Type BBY 57-02W Marking 5 Ordering Code Q62702-B915 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 10 20 -55 ...+150 -55 ...+150 Unit V mA C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Jul-30-1998 1998-11-01 BBY 57-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 1 100 nA Unit IR IR - VR = 8 V Reverse current VR = 8 V, TA = 65 C AC characteristics Diode capacitance CT 16.5 4 17.5 8.7 7.1 4.73 2.45 3.7 0.3 0.09 0.6 18.6 5.5 4.5 - pF VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/C T3 CT1/C T4 rs CC Ls 3 - - VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance pF nH VR = 1 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-30-1998 1998-11-01 BBY 57-02W Diode capacitance CT = f (V R) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) 10 -1 40 pF 1/C CT 30 T Cc 10 -2 25 20 15 10 -3 10 5 10 -4 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 0.5 1.0 1.5 2.0 2.5 3.0 V 4.0 VR VR Normalized diode capacitance C(TA) / C(25C)= f (T A) f = 1MHz, VR = Parameter 1.04 - 1V CTA 1.02 /C 25C 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -30 4V -10 10 30 50 70 C 100 TA Semiconductor Group Semiconductor Group 33 Jul-30-1998 1998-11-01 |
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